The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2019

Filed:

May. 29, 2018
Applicant:

Silicon Motion Inc., Hsinchu County, TW;

Inventors:

Yu-Wei Chyan, Hsinchu, TW;

Li-Shuo Hsiao, Hsinchu County, TW;

Assignee:

Silicon Motion Inc., Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G06F 1/3225 (2019.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 5/147 (2013.01); G06F 1/3225 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 2029/0401 (2013.01);
Abstract

A method for controlling operations of a memory device, the memory device and the controller thereof, and the associated electronic device are provided. The method can comprise: before a voltage-drop event regarding a driving voltage occurs, mapping a rising reference voltage and a falling reference voltage to a first reference voltage and a second reference voltage, respectively; when the voltage-drop event occurs, pausing at least one access operations to a non-volatile (NV) memory, and mapping the rising reference voltage and the falling reference voltage to another first reference voltage and another second reference voltage, respectively; and when the voltage-drop event ends, mapping the rising reference voltage and the falling reference voltage to the first reference voltage and the second reference voltage, respectively.


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