The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
May. 23, 2018
Applicant:
Emil Kamieniecki, Bedford, MA (US);
Inventor:
Emil Kamieniecki, Bedford, MA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/20 (2006.01); G01T 1/24 (2006.01); H01L 27/146 (2006.01); G01T 1/202 (2006.01); G01T 3/08 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2018 (2013.01); G01T 1/2023 (2013.01); G01T 1/24 (2013.01); G01T 3/08 (2013.01); H01L 27/14676 (2013.01); H01L 27/14696 (2013.01);
Abstract
A Defect Specific Lifetime Analysis (DSLA) can measure electrostatic hole trapping characteristics of semiconductors to identify crystals for use in radiation detectors. A semiconductor crystal with high electrostatic hole trapping can be employed in radiation detectors having simplified signal processing circuits and/or high radiation energy measurement resolution.