The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Feb. 09, 2017
Sandia Corporation, Albuquerque, NM (US);
Albert Alec Talin, Dublin, CA (US);
Farid El Gabaly Marquez, Berkeley, CA (US);
Elliot James Fuller, Pleasanton, CA (US);
Sapan Agarwal, Dublin, CA (US);
National Technology & Engineering Solutions of Sandia, LLC, Albuquerque, NM (US);
Abstract
Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.