The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Apr. 05, 2013
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Katsunori Danno, Toyota, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi, JP;
Abstract
A high-quality SiC single crystal and a method for producing such a SiC single crystal is provided. In the SiC single crystal, the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced. The method for producing the SiC single crystal according to a solution technique involves bringing an SiC seed crystal into contact with an Si—C solution having a temperature gradient in which a temperature of the Si—C solution is lower towards the surface of the SiC seed crystal. Growing an SiC single crystal includes setting the temperature gradient of the surface region of the Si—C solution to 10° C/cm or below, bringing the (1-100) face of the SiC seed crystal into contact with the Si—C solution, and growing an SiC single crystal on the (1-100) face of the seed crystal at a ratio (single crystal growth rate/temperature gradient) of less than 20×10cm/h·° C.