The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Oct. 15, 2013
Hitachi, Ltd., Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
Maintaining pressure inside a culturing vessel is difficult when minimizing the size of a liquid supply path that supplies liquid and gas to a cell culturing vessel that performs two-level culturing (co-culturing). This cell culturing device includes: culturing vessels; a flow path having at least first supply ports capable of supplying liquid or gas to the culturing vessels and first discharge ports that discharge the gas from the culturing vessels, said flow path discharging gas from the first discharge ports to the atmosphere; and a filter in the flow path. A trap bottle is provided between the first discharge ports and the filter upon the flow path to collect moisture from the discharged gas. Thus, a liquid phase and a gas phase are separated in the trap bottle; moisture is prevented from reaching the filter; filter clogging is prevented; and the internal pressure of the culturing vessels can be maintained.