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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10427949 B1

PDFFull Text
Date of Patent:
Oct. 01, 2019

Filed:

Mar. 01, 2018

Alumina sintered body and base substrate for optical device

Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Kiyoshi Matsushima, Nagoya, JP;

Morimichi Watanabe, Nagoya, JP;

Kei Sato, Tokai, JP;

Tsutomu Nanataki, Toyoake, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:

Burr & Brown, PLLC

Primary Examiner:

Steven J Bos

Int. Cl.
CPC ...
C01F 7/00 (2006.01); C01F 7/02 (2006.01); C04B 35/115 (2006.01); G02B 1/02 (2006.01); C04B 35/632 (2006.01); C04B 35/634 (2006.01); C04B 35/638 (2006.01); C04B 35/645 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C01F 7/02 (2013.01); C04B 35/115 (2013.01); C04B 35/632 (2013.01); C04B 35/638 (2013.01); C04B 35/6342 (2013.01); C04B 35/645 (2013.01); G02B 1/02 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2002/80 (2013.01); C01P 2004/02 (2013.01); C01P 2006/16 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/5292 (2013.01); C04B 2235/5296 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5472 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/72 (2013.01); C04B 2235/724 (2013.01); C04B 2235/786 (2013.01); C04B 2235/787 (2013.01); H01L 33/007 (2013.01); H01L 33/0087 (2013.01);
Abstract

An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

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