The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2019
Filed:
Nov. 12, 2015
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Satoru Mikajiri, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); A61B 8/14 (2006.01); H01L 27/02 (2006.01); A61B 8/00 (2006.01); B06B 1/02 (2006.01); H03F 1/52 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
A61B 8/14 (2013.01); A61B 8/56 (2013.01); B06B 1/0207 (2013.01); H01L 27/0266 (2013.01); H03F 1/523 (2013.01); A61B 8/4483 (2013.01); H02H 9/046 (2013.01);
Abstract
A P-channel type MOSFET and an N-channel type MOSFET formed by a CMOS process are connected in series. A high-voltage signal and a low-voltage signal are applied to the drain of one of transistors. Prescribed bias voltage is applied to both gates in order that only a low-voltage signal can pass through both conduction paths.