The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Nov. 08, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Alexander Bachmann, Ismaning, DE;

Christian Lauer, Regensburg, DE;

Michael Furitsch, Ascha, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/20 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); G02B 6/42 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2036 (2013.01); G02B 6/4292 (2013.01); H01S 5/0282 (2013.01); H01S 5/0425 (2013.01); H01S 5/22 (2013.01); H01S 5/3201 (2013.01); H01S 5/34306 (2013.01); H01S 5/34313 (2013.01); H01S 2301/18 (2013.01);
Abstract

A semiconductor laser diode includes a layer sequence including a plurality of layers arranged one above another in a growth direction, wherein the semiconductor laser diode includes a first facet and a second facet between which a resonator extending in a longitudinal direction is formed, the layer sequence includes an active layer in which an active region is formed, the layer sequence includes waveguide layers, and the layer sequence includes a stressed layer arranged above the active layer in the growth direction, the stressed layer being provided for influencing a refractive index profile in the waveguide layers at least to partly compensate for an inhomogeneous variation of a refractive index in the waveguide layers, the inhomogeneous variation being brought about by an inhomogeneous temperature distribution during operation of the semiconductor laser diode.


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