The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jul. 24, 2015
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventors:
Kunifumi Suzuki, Yokkaichi, JP;
Kazuhiko Yamamoto, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 45/085 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract
According to one embodiment, a memory device includes a first electrode; a variable resistance layer provided on the first electrode, the variable resistance layer including a chalcogenide compound having a crystal structure; and a second electrode provided on the variable resistance layer. The variable resistance layer includes a first region covering one of an upper surface of the first electrode or a lower surface of the second electrode, and a second region, a concentration of the chemical element being lower in the second region than in the first region.