The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Feb. 17, 2017
Applicant:
Silicon Display Technology, Yongin-si, KR;
Inventors:
Assignee:
SILICON DISPLAY TECHNOLOGY, Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/535 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 23/535 (2013.01); H01L 29/0649 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01);
Abstract
An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.