The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Feb. 27, 2017
Applicant:

Kunshan New Flat Panel Display Technology Center Co., Ltd., KunShan, Jiangsu, CN;

Inventors:

Qi Shan, KunShan, CN;

Kun Hu, KunShan, CN;

Li Lin, KunShan, CN;

Song Liu, KunShan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 29/66 (2006.01); H01L 51/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 27/1248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 29/66742 (2013.01); H01L 29/78603 (2013.01); H01L 51/0097 (2013.01); H01L 2251/5338 (2013.01);
Abstract

A thin film transistor with a protective layer is disclosed. The thin film transistor includes an active region (), a gate insulating layer (), a gate (), a source () and a drain (), a passivation layer (), and a planarization layer () that are successively formed on a flexible substrate (), wherein a protective layer () is formed between the passivation layer () and the planarization layer (), and located directly above the active region () and the gate (), and wherein the protective layer is made of metal and covers part of the active region in a direction perpendicular to the gate, the protective layer completely covering a gap between the gate and the source as well as a gap between the gate and the drain, and not completely covering the gate.


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