logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10424612 B1

PDFFull Text
Date of Patent:
Sep. 24, 2019

Filed:

Jun. 13, 2016

Method of forming a semiconductor device

Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Stephen R. Forrest, Ewing, NJ (US);

Xin Xu, Ewing, NJ (US);

Christopher Kyle Renshaw, Ewing, NJ (US);

Assignee:

THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);

Attorney:

Riverside Law LLP

Primary Examiner:

A Dexter Tugbang

Assistant Examiner:

Jeffrey T Carley

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 51/00 (2006.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H05K 13/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14692 (2013.01); H01L 27/14612 (2013.01); H01L 27/307 (2013.01); H01L 27/3253 (2013.01); H01L 51/0021 (2013.01); H01L 51/0097 (2013.01); H05K 13/046 (2013.01); H01L 27/14609 (2013.01); H01L 51/0022 (2013.01); H01L 2251/5338 (2013.01); Y02E 10/549 (2013.01); Y10T 29/4913 (2015.01); Y10T 29/49128 (2015.01);
Abstract

A method of forming a semiconductor device includes the steps of providing a first circuit layer including a plurality of first contacts, providing one or more semiconductor devices disposed on a stamp, the one or more semiconductor devices including a plurality of second contacts, bonding the plurality of second contacts to the plurality of first contacts via a pressure applied by the stamp.

Find Patent Forward Citations

Forrest, Stephen. (2019). Method of forming a semiconductor device (U.S. Patent No. 10424612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10424612

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…