The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jun. 13, 2016
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Stephen R. Forrest, Ewing, NJ (US);
Xin Xu, Ewing, NJ (US);
Christopher Kyle Renshaw, Ewing, NJ (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF MICHIGAN, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 51/00 (2006.01); H01L 27/30 (2006.01); H01L 27/32 (2006.01); H05K 13/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14692 (2013.01); H01L 27/14612 (2013.01); H01L 27/307 (2013.01); H01L 27/3253 (2013.01); H01L 51/0021 (2013.01); H01L 51/0097 (2013.01); H05K 13/046 (2013.01); H01L 27/14609 (2013.01); H01L 51/0022 (2013.01); H01L 2251/5338 (2013.01); Y02E 10/549 (2013.01); Y10T 29/4913 (2015.01); Y10T 29/49128 (2015.01);
Abstract
A method of forming a semiconductor device includes the steps of providing a first circuit layer including a plurality of first contacts, providing one or more semiconductor devices disposed on a stamp, the one or more semiconductor devices including a plurality of second contacts, bonding the plurality of second contacts to the plurality of first contacts via a pressure applied by the stamp.