The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jan. 12, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Hisanori Ihara, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14868 (2013.01);
Abstract
An image sensor includes a lower substrate including logic circuits and an upper substrate including pixels. Transistors provided on the upper substrate have the same conductivity type. Each of the transistors includes source/drain regions provided in the upper substrate, an upper gate electrode provided on the upper substrate, and a silicon oxide layer disposed between the upper substrate and the upper gate electrode. The silicon oxide layer is in physical contact with the upper substrate and the upper gate electrode.