The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Dec. 31, 2015
Applicant:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Inventor:
Dongkak Lee, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/11582 (2017.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01); H01L 27/108 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02645 (2013.01); H01L 21/02658 (2013.01); H01L 21/76 (2013.01); H01L 21/763 (2013.01); H01L 21/76224 (2013.01); H01L 27/10894 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01);
Abstract
Provided are methods of forming a thin film and methods of fabricating a semiconductor device including the same. The thin film forming methods may include supplying an organic silicon source to form a silicon seed layer on a lower layer, the silicon seed layer including silicon seed particles adsorbed on the lower layer, and supplying an inorganic silicon source to deposit a silicon film on the lower layer adsorbed with the silicon atoms.