The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Nov. 12, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Hui Zang, Guilderland, NY (US);

Manfred Eller, Beacon, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10826 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0629 (2013.01); H01L 27/0886 (2013.01); H01L 27/10855 (2013.01); H01L 27/10879 (2013.01); H01L 29/785 (2013.01); H01L 21/823481 (2013.01);
Abstract

A semiconductor memory device includes, for example, a substrate having a fin having a web portion extending from the substrate and a first overhanging fin portion extending outward from the web portion and spaced from the substrate, the fin comprising a source/drain region in the web portion of the fin, a first source/drain region in the first overhanging fin portion, an isolation material surrounding the web portion and disposed under the first overhanging fin portion of the fin, an upper surface of the isolation material being below an upper surface of the fin, a first gate disposed over the fin between the source/drain region in the web portion of the fin and the first source/drain region in the first overhanging fin portion of the fin, and a capacitor operably electrically connected to the first source/drain region in the first overhanging fin portion.


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