The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Apr. 17, 2017
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Mitsunori Kimura, Kariya, JP;

Hiroshi Shimizu, Kariya, JP;

Kengo Mochiki, Kariya, JP;

Yasuyuki Ohkouchi, Kariya, JP;

Yuu Yamahira, Kariya, JP;

Tetsuya Matsuoka, Kariya, JP;

Kazuma Fukushima, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 23/473 (2006.01); H01L 23/495 (2006.01); H01L 25/07 (2006.01); H01L 25/11 (2006.01); H05K 7/20 (2006.01); H05K 1/02 (2006.01); H01L 23/433 (2006.01); H01L 23/40 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/4012 (2013.01); H01L 23/433 (2013.01); H01L 23/473 (2013.01); H01L 23/49541 (2013.01); H01L 23/49548 (2013.01); H01L 23/49575 (2013.01); H01L 25/072 (2013.01); H01L 25/112 (2013.01); H01L 25/117 (2013.01); H05K 7/20927 (2013.01); H01L 23/49568 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H05K 1/0203 (2013.01); H05K 2201/10166 (2013.01); H05K 2201/10522 (2013.01);
Abstract

A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.


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