The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Jun. 12, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung Il Park, Gwacheon-si, KR;

Jeong Hoon Ahn, Yongin-si, KR;

Joon-Nyung Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/76811 (2013.01); H01L 21/76816 (2013.01); H01L 23/5283 (2013.01); H01L 23/562 (2013.01); H01L 23/564 (2013.01); H01L 23/585 (2013.01);
Abstract

A semiconductor device, comprising: a substrate which includes an active circuit region, and a boundary region surrounding the active circuit region, the boundary region including an edge portion of the substrate; a first lower conductive pattern disposed on the substrate of the boundary region; and a first upper conductive pattern connected to the first lower conductive pattern over the first lower conductive pattern, wherein the first upper conductive pattern includes a first portion having a first thickness, a second portion having a second thickness greater than the first thickness, and a third portion having a third thickness greater than the second thickness, and the third portion of the first upper conductive pattern is connected to the first lower conductive pattern, is provided.


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