The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Feb. 10, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventor:

Franz Eberhard, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 33/00 (2010.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 31/0224 (2006.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01S 5/20 (2006.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 33/30 (2010.01); H01L 33/42 (2010.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/2855 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/76831 (2013.01); H01L 21/76879 (2013.01); H01L 31/022408 (2013.01); H01L 33/005 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01S 5/2081 (2013.01); H01L 31/022466 (2013.01); H01L 31/0304 (2013.01); H01L 31/1884 (2013.01); H01L 33/30 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01S 5/22 (2013.01); H01S 2301/176 (2013.01);
Abstract

A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. The method further includes applying a contact layer to the first mask layer and the bottom face of the at least one recess using a directional deposition method and applying a passivation layer to the side face of the at least one recess.


Find Patent Forward Citations

Eberhard, Franz. (2019). Method for producing a semiconductor body (U.S. Patent No. 10424509). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10424509

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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