The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Mar. 23, 2017
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventors:
Yong Woo Lee, Seoul, KR;
Jin Ha Kim, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76871 (2013.01); H01L 21/28282 (2013.01); H01L 21/76864 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
Provided herein is a method of manufacturing a semiconductor device. The method may include forming an amorphous channel layer. The method may include forming a diffusion barrier on the amorphous channel layer. The method may include forming an amorphous seed layer on the diffusion barrier. The method may include forming a seed layer by crystallizing the amorphous seed layer. The method may include forming a channel layer by crystallizing the amorphous channel layer.