The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Jul. 24, 2015
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Younghak Chang, Seoul, KR;

Jina Jeon, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01L 25/075 (2006.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H02N 13/00 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); H01L 25/0753 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/62 (2013.01); H02N 13/00 (2013.01); H01L 21/6831 (2013.01); H01L 33/0095 (2013.01); H01L 2224/95 (2013.01); H01L 2933/0033 (2013.01);
Abstract

A method of transferring a semiconductor light emitting device, and which includes positioning a transfer head having a head electrode facing a semiconductor light emitting device having an undoped semiconductor layer, the semiconductor light emitting device arranged on a carrier substrate; moving the head electrode of the transfer head close to the undoped semiconductor layer of the semiconductor light emitting device; applying a voltage to the head electrode to provide an attachment force to the undoped semiconductor layer by an electrostatic force; and picking-up the semiconductor light emitting device and transferring the semiconductor light emitting device to base substrate.


Find Patent Forward Citations

Loading…