The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Dec. 22, 2017
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Mo Chen, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Li-Hui Zhang, Beijing, CN;
Xiao-Yang Xiao, Beijing, CN;
Jin Zhang, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method of making nano-scaled channel, the method including: locating a first photoresist layer, a nanowire structure, and a second photoresist layer on a surface of a substrate, and the nanowire structure being sandwiched between the first photoresist layer and the second photoresist layer, wherein the nanowire structure comprises an nanowire; forming an opening in the first photoresist layer and the second photoresist layer to expose a portion of the surface of the substrate to form an exposed surface, wherein a part of the nanowire is exposed and suspended in the opening, and both ends of the nanowire are sandwiched between the first photoresist layer and the second photoresist layer; and depositing a thin film layer on the exposed surface of the substrate using the a nanowire as a mask, wherein the thin film layer defines a nano-scaled channel corresponding to the at least one nanowire.