The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2019

Filed:

Apr. 18, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lin Xu, Fremont, CA (US);

Zhijun Chen, San Jose, CA (US);

Anchuan Wang, San Jose, CA (US);

Son T. Nguyen, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); H01J 37/32009 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 37/32715 (2013.01); H01J 37/32899 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01);
Abstract

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.


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