The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Mar. 04, 2019
University of Washington, Center for Commercialization, Seattle, WA (US);
The Scripps Research Institute, La Jolla, CA (US);
International Aids Vaccine Initiative, New York, NY (US);
Po-Ssu Huang, Seattle, WA (US);
Joseph Graham Jardine, Seattle, WA (US);
Sergey V. Menis, Bothell, WA (US);
William Ray Schief, Encinitas, CA (US);
Neil P. King, Seattle, WA (US);
University of Washington, Center for Commercialization, Seattle, WA (US);
The Scripps Research Institute, La Jolla, CA (US);
International AIDS Vaccine Initiative, New York, NY (US);
Abstract
The invention relates to an engineered outer domain (eOD) of HIV gp120 and mutants thereof and methods of making and using the same. The mutant eODs may be advantageous for the elicitation of CD4-binding site (CD4bs)-directed broadly-neutralizing antibodies (bnAbs) and/or improve binding to mature VRC01 and/or improve binding to germline VRC01 and the germlines of other VH1-2 derived broadly-neutralizing antibodies. The mutant eODs may also include glycan-masking mutations on eOD. The present invention also includes fusions of eOD to various protein multimers to enhance immunogenicity as well as the design of cocktails of different eODs that represent the full diversity of HIV sequences within the VRC01 epitope and surroundings.