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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10421668 B1

PDFFull Text
Expired
Date of Patent:
Sep. 24, 2019

Filed:

May. 25, 2017

Method for preparing tungsten sulfide thin film

Applicant:

Shenzhen University, Shenzhen, Guangdong, CN;

Inventors:

Xinke Liu, Guangdong, CN;

Jiazhu He, Guangdong, CN;

Qiang Liu, Guangdong, CN;

Youming Lv, Guangdong, CN;

Wenjie Yu, Guangdong, CN;

Shun Han, Guangdong, CN;

Peijiang Cao, Guangdong, CN;

Wenjun Liu, Guangdong, CN;

Yuxiang Zeng, Guangdong, CN;

Fang Jia, Guangdong, CN;

Deliang Zhu, Guangdong, CN;

Assignee:

SHENZHEN UNIVERSITY, Shenzhen, CN;

Attorney:
Primary Examiner:

Bret P Chen

Int. Cl.
CPC ...
C23C 16/30 (2006.01); C01G 41/00 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); B82Y 40/00 (2011.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C01G 41/00 (2013.01); C23C 16/0227 (2013.01); C23C 16/305 (2013.01); C23C 16/45525 (2013.01); C23C 16/45529 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02568 (2013.01); H01L 21/02658 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/82 (2013.01); C01P 2004/02 (2013.01); Y10S 977/755 (2013.01); Y10S 977/891 (2013.01); Y10S 977/932 (2013.01);
Abstract

A method for preparing a tungsten sulfide thin film is provided. The method includes the steps of: applying a one-atom-thick W layer on a silicon substrate; applying a one-atom-thick S layer on the W layer; and applying another one-atom-thick W layer on the S layer, to obtain a thin film that is a single-layer thin film having a W—S—W layered structure.

Find Patent Forward Citations

Liu, Xinke. (2019). Method for preparing tungsten sulfide thin film (U.S. Patent No. 10421668). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10421668

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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