The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2019
Filed:
Jan. 17, 2017
Korea Institute of Science and Technology, Seoul, KR;
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Abstract
Provided is a fabrication method of print head of MCM device formed micro patterned air gap capable of picoliter-scale droplet printing, and more particularly, is characterized in that comprising preparing silicon waferwashed by piranha solution at step A, stacking silicon nitride filmsandup front surface and back surface of prepared silicon wafer at step B, drying after applying photoresistsandto top surface and bottom surface of the silicon nitride filmandat step C, removing partially the photoresists through pre-determined pattern by irradiation of ultraviolet after arranging photomaskformed through pre-determined pattern in any one side of the photoresistsandat step D, forming sample droplet storage space opening by removing silicon nitride filmcontacted to photoresists removed by pre-determined pattern at step E, removing the photoresistsandstacked up the silicon nitride filmandat step F, forming sample droplet storage spaceby etching the silicon wafer at step G, and forming sample droplet openingby irradiating ultrasonic waves at step H.