The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Oct. 06, 2016
Applicant:
Inter-university Research Institute Corporation High Energy Accelerator Research Organization, Tsukuba-shi, Ibaraki, JP;
Inventors:
Assignees:
INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION, Tsukuba-shi, JP;
HIGH ENERGY ACCELERATION RESEARCH ORGANIZATION, Tsukuba-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/08 (2006.01); H03K 17/081 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H03K 19/003 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H01L 27/1203 (2013.01); H01L 29/786 (2013.01); H01L 29/78651 (2013.01); H03K 19/00338 (2013.01); H01L 21/823462 (2013.01); H01L 27/088 (2013.01); H03K 2017/0803 (2013.01);
Abstract
The present invention provides a radiation-damage-compensation-circuit and a SOI-MOSFET that has high radiation resistance. The SOI-MOSFET has the radiation-damage-compensation-circuit to recover the characteristics of the SOI-MOSFET after X-ray irradiation.