The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jan. 28, 2015
Applicant:
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Inventors:
Brent Buchanan, Palo Alto, CA (US);
Richard J. Auletta, Fort Collins, CO (US);
Ning Ge, Palo Alto, CA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); G11C 13/00 (2006.01); H01L 27/02 (2006.01); H01L 45/00 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 21/823475 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01); H01L 45/1608 (2013.01); G11C 13/004 (2013.01); G11C 13/0097 (2013.01); G11C 2029/5002 (2013.01); H01L 27/092 (2013.01);
Abstract
In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.