The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Nov. 19, 2018
Applicant:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Inventors:
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Assignee:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01); H01S 5/04 (2006.01); H01S 5/125 (2006.01); H01S 5/30 (2006.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01S 5/323 (2006.01); H01S 5/02 (2006.01); H01L 33/10 (2010.01);
U.S. Cl.
CPC ...
H01S 5/3202 (2013.01); H01L 33/10 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01S 5/0205 (2013.01); H01S 5/04 (2013.01); H01S 5/125 (2013.01); H01S 5/305 (2013.01); H01S 5/32341 (2013.01); H01S 5/34333 (2013.01); H01S 5/3013 (2013.01); H01S 5/343 (2013.01); H01S 2304/04 (2013.01);
Abstract
An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.