The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jul. 06, 2018
Ii-vi Delaware, Inc., Wilmington, DE (US);
Abram Jakubowicz, Pfaeffikon SZ, CH;
II-VI Delaware, Inc., Wilmington, DE (US);
Abstract
An edge-emitting laser diode is formed to include a quantum well passivation structure comprising alternating thin layers of a semiconductor material (e.g., silicon, germanium, or antimony) and a dielectric barrier. The semiconductor layers are sufficiently thin to form quantum wells, with the dielectric layers functioning as barriers between adjacent quantum wells. The semiconductor layer adjacent to the facet is formed of crystalline material, with the remaining quantum wells formed of amorphous material. The structure, and the method of forming the structure, results in a configuration that exhibits higher levels of COD than devices using a bulk (thick) silicon passivation layer.