The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Jul. 28, 2016
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Korbinian Perzlmaier, Regensburg, DE;

Anna Kasprzak-Zablocka, Donaustauf, DE;

Christine Rafael, Donaustauf, DE;

Christian Leirer, Friedberg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/46 (2010.01); H01L 33/36 (2010.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/22 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 33/54 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01);
Abstract

An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.


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