The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Nov. 25, 2015
Osram Opto Semiconductors Gmbh, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
An optoelectronic semiconductor chip having a semiconductor body () that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face () is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet () that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer () that connects the conversion platelet () to the radiation exit face (), wherein the wavelength-converting joining layer () has luminescent material particles () that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer () furthermore has a thickness of no more than 30 micrometers. A method for fabricating an optoelectronic semiconductor chip, a further semiconductor chip, conversion element and luminescent material are specified.