The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Dec. 06, 2017
Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;
Po-Min Tu, Hsinchu, TW;
Tzu-Chien Hung, Hsinchu, TW;
Chia-Hui Shen, Hsinchu, TW;
Chien-Shiang Huang, Hsinchu, TW;
Chien-Chung Peng, Hsinchu, TW;
Ya-Wen Lin, Hsinchu, TW;
Ching-Hsueh Chiu, Hsinchu, TW;
ADVANCED OPTOELECTRONIC TECHNOLOGY INC., Hsinchu Hsien, TW;
Abstract
A method for manufacturing light emitting diode crystal grains includes steps of providing a first substrate; forming a buffer layer on the first substrate; forming a UV blocking layer on buffer layer; and forming a plurality of light emitting diode crystal grains on the buffer layer. The emitting diode crystal grains together form a wafer. An auxiliary substrate is provided and coated with an adhesive layer. The auxiliary substrate is pressed to the wafer, the adhesive layer fills gaps between the light emitting diode crystal grains, and solidifies the adhesive layer. The second surface is irradiated and gasified. The first substrate is thus separated from the UV blocking layer and the adhesive layer is dissolved, thus achieving a plurality of light-emitting diode crystal grains.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile