The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
May. 17, 2016
Full-laser scribing method for large-area copper indium gallium selenide thin-film solar cell module
Beijing Sifang Automation Co., Ltd., Beijing, CN;
Beijing Sifang Crenergey Optoelectronics Technology Co., Ltd., Beijing, CN;
BEIJING SIFANG AUTOMATION CO., LTD., Beijing, CN;
BEIJING SIFANG CRENERGEY OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
Disclosed is a full-laser scribing method for a large-area copper indium gallium selenide (CIGS) thin-film solar cell module, including: using a laser I to scribe a molybdenum thin film prepared on soda-lime glass to form a first scribed line (P); preparing the following film layers in sequence on the molybdenum layer in which Phas been scribed: a CIGS layer, a cadmium sulfide layer and an intrinsic zinc oxide layer; after finishing preparation of the above film layers, using a laser II for scribing to form a second scribed line (P), wherein the scribed line Pis parallel with the scribed line Pand preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer in which Phas been scribed, and using a laser III for scribing to form a third scribed line (P), wherein the scribed line Pis parallel with the scribed line P