The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Sep. 09, 2016
Applicant:

Aledia, Grenoble, FR;

Inventors:

Tiphaine Dupont, Grenoble, FR;

Erwan Dornel, Fontaine, FR;

Assignee:

Aledia, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/173 (2006.01); H01L 31/16 (2006.01); H01L 31/167 (2006.01); H01L 25/16 (2006.01); H01L 33/08 (2010.01); H01L 33/18 (2010.01); H01L 27/146 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 31/173 (2013.01); H01L 25/167 (2013.01); H01L 27/14643 (2013.01); H01L 31/16 (2013.01); H01L 31/165 (2013.01); H01L 31/167 (2013.01); H01L 33/08 (2013.01); H01L 33/18 (2013.01); H01L 27/156 (2013.01);
Abstract

A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.


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