The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Oct. 20, 2017
Applicant:
Intersil Americas Llc, Milpitas, CA (US);
Inventor:
Dev Alok Girdhar, Indialantic, FL (US);
Assignee:
Intersil Americas LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01); H01L 29/66681 (2013.01); H01L 29/0696 (2013.01);
Abstract
One embodiment is directed towards a method. The method includes forming a drift region of a first conductivity type above or in a substrate. The substrate has first and second surfaces. A first insulator is formed over a first portion of the channel, and which has a first thickness. A second insulator is formed over the second portion of the channel, and which has a second thickness that is less than the first thickness. A first gate is formed over the first insulator. A second gate is formed over the second insulator. A body region of a second conductivity type is formed above or in the substrate.