The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jun. 04, 2018
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Yoshiaki Toyoda, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A vertical MOSFET is provided in an output stage region of a semiconductor substrate while a lateral n-channel MOSFET and a vertical diode are provided in a circuit region. The vertical diode is constituted by a p-type diffusion region that penetrates a p-type well region in a depth direction. A bottom of a first contact trench provided in an n-type source region of the vertical MOSFET is covered by a p-type contact region. A bottom of a second contact trench provided in an n-type source region of the lateral n-channel MOSFET is covered by a p-type contact region and a third contact trench provided in an n-type drain region is covered entirely by the n-type drain region.