The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
May. 16, 2017
Applicant:
Hestia Power Inc., Hsinchu, TW;
Inventors:
Assignee:
HESTIA POWER INC., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/45 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7806 (2013.01); H01L 29/06 (2013.01); H01L 29/0688 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/0869 (2013.01); H01L 29/1608 (2013.01); H01L 29/1095 (2013.01); H01L 29/45 (2013.01); H01L 29/872 (2013.01);
Abstract
The present invention is related to a silicon carbide semiconductor device which employs a silicon carbide substrate to form an integrated device. The integrated device of the present invention comprises a metal oxide semiconductor field-effect transistor (MOSFET) and an integrated junction barrier Schottky (JBS) diode in an anti-parallel connection with the MOSFET.