The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Mar. 06, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Ryohei Gejo, Kanazawa, JP;
Kazutoshi Nakamura, Nonoichi, JP;
Norio Yasuhara, Kanazawa, JP;
Tomohiro Tamaki, Nonoichi, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a first diode portion including a first trench extending in a first direction, and a first trench electrode; a second diode portion adjacent to the first diode portion in the first direction and includes a second trench extending in the first direction, and a second trench electrode and of which the width in the first direction is greater than the width of the first diode portion in a second direction perpendicular to the first direction; and a first IGBT portion adjacent to the first diode portion in the second direction and is adjacent to the second diode portion in the first direction and includes a third trench extending in the first direction, and a first gate electrode.