The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Apr. 22, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Emre Alptekin, Fishkill, NY (US);
Robert R. Robison, Colchester, VT (US);
Reinaldo A Vega, Wappingers Falls, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/401 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66803 (2013.01);
Abstract
A fin-shaped field effect transistor (finFET) device comprising includes a substrate, an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The device further includes metallic source and drain regions formed over the fin and on opposing sides of the gate.