The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Jul. 20, 2018
Ubiq Semiconductor Corp., Hsinchu County, TW;
Chin-Fu Chen, Hsinchu County, TW;
Yi-Yun Tsai, Hsinchu County, TW;
UBIQ Semiconductor Corp., Hsinchu County, TW;
Abstract
Provided is a trench gate MOSFET including a substrate of a first conductivity type, an epitaxial layer of the first conductivity type, a first conductive layer of a second conductivity type, a second conductive layer and an interlayer insulating layer. The epitaxial layer is disposed on the substrate and has at least one trench therein. The first conductive layer is disposed in the lower portion of the trench and in physical contact with the epitaxial layer. The second conductive layer is disposed in the upper portion of the trench. The interlayer insulating layer is disposed between the first conductive layer and the second conductive layer.