The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Feb. 01, 2018
Microchip Technology Incorporated, Chandler, AZ (US);
Randy Yach, Phoenix, AZ (US);
Rohan Braithwaite, Gilbert, AZ (US);
MICROCHIP TECHNOLOGY INCORPORATED, Chandler, AZ (US);
Abstract
A capacitor structure may include a lower conducting layer (e.g., poly 1 layer) and an upper conducting layer (e.g., overlying poly 2 layer), which define an anode and cathode, and a dielectric layer (e.g., an ONO layer stack) located between the upper conducting layer and the lower conducting layer, wherein a portion of the dielectric layer (e.g., at least the nitride layer of the ONO layer stack) extends beyond a lateral edge of the upper conducting layer. A method forming such capacitor structure may utilize a spacer adjacent the lateral edge of the upper conducting layer and over the first portion of the dielectric layer, performing an etch to remove a first portion of the dielectric layer but protect a second portion located below the spacer and extending laterally beyond an edge of the upper conducting layer.