The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Apr. 19, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Fang-Wen Liu, New Taipei, TW;

Tseng-Fu Lu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 27/0814 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01);
Abstract

The present disclosure provides a diode structure and an electrostatic discharge (ESD) protection circuit including the same. The diode structure includes a P-type substrate. The diode structure further includes a plurality of wavy N-doping regions formed on the P-type substrate. Each of the wavy N-doping regions extends in a first direction and has an N-doping width in a second direction perpendicular to the first direction. The diode structure further includes a plurality of wavy P-doping regions formed on the P-type substrate. Each of the wavy P-doping regions extends in the first direction and has a P-doping width in the second direction. The N-doping widths are essentially identical at different positions along the first direction, and the P-doping widths are essentially identical at different positions along the first direction.


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