The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Sep. 19, 2017
Applicant:

Seoul Semiconductor Co., Ltd., Ansan-si, KR;

Inventors:

Myung Jin Kim, Ansan-si, KR;

Kwang Yong Oh, Ansan-si, KR;

Seung Ryeol Ryu, Ansan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 25/13 (2006.01); H01L 33/50 (2010.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 25/13 (2013.01); H01L 33/502 (2013.01); H01L 33/507 (2013.01); H01L 33/483 (2013.01);
Abstract

A light emitting diode package including a housing, a first light emitting diode chip and a second light emitting diode chip disposed in the housing, and a wavelength conversion part including a phosphor configured to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than the light emitted from the first light emitting diode chip, in which the light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, and the phosphor has a fluorescence intensity of 10 or less at a peak wavelength of light emitted from the second light emitting diode chip, with reference to a maximum fluorescence intensity of 100 at a wavelength of 425 nm to 475 nm on an excitation spectrum of the second light emitting diode chip.


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