The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10418336 B1

Date of Patent:

Sep. 17, 2019

Filed:

Feb. 01, 2018

Manufacturing method of semiconductor device and semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Morio Iwamizu, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Mark V Prenty

Int. Cl.

CPC ...

H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 21/321 (2006.01); H01L 29/45 (2006.01); H01L 27/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);

U.S. Cl.

CPC ...

H01L 23/562 (2013.01); H01L 21/3212 (2013.01); H01L 21/32133 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/823475 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/48 (2013.01); H01L 27/06 (2013.01); H01L 27/0617 (2013.01); H01L 29/45 (2013.01); H01L 21/28568 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01);

Abstract

To protect the insulating film so that crack is not produced in the insulating film even when stress is applied to the semiconductor device. A manufacturing method of a semiconductor device is provided, including: forming an insulating film above a semiconductor substrate; forming, in the insulating film, one or more openings that expose the semiconductor substrate; forming a tungsten portion deposited in the openings and above the insulating film; thinning the tungsten portion on condition that the tungsten portion remains in at least part of a region above the insulating film; and forming an upper electrode above the tungsten portion.

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