The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Sep. 11, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Jeffrey A. West, Dallas, TX (US);

Byron Lovell Williams, Plano, TX (US);

David Leonard Larkin, Richardson, TX (US);

Weidong Tian, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5222 (2013.01); H01L 21/0217 (2013.01); H01L 21/768 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 28/40 (2013.01); H01L 2224/05 (2013.01); H01L 2224/48463 (2013.01);
Abstract

A method and structure suitable for, e.g., improving high voltage breakdown reliability of a microelectronic device such as a capacitor usable for galvanic isolation of two circuits. A metal plate having a top surface and a side surface is located over a first dielectric layer. A second dielectric layer of a second different material is located over the first metal plate. A dielectric structure of the first material is located over the side surface of the metal plate and over the surface of the first dielectric layer.


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