The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2019
Filed:
Dec. 22, 2017
Applicant:
Deere & Company, Moline, IL (US);
Inventors:
Christopher J. Schmit, Fargo, ND (US);
Richard E. Wainwright, West Fargo, ND (US);
Assignee:
DEERE & COMPANY, Moline, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/373 (2006.01); H01L 23/50 (2006.01); H01L 23/34 (2006.01); H01L 23/00 (2006.01); G01R 19/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3735 (2013.01); G01R 19/0084 (2013.01); H01L 23/34 (2013.01); H01L 23/50 (2013.01); H01L 24/48 (2013.01); H01L 25/072 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19105 (2013.01);
Abstract
A metallic island is disposed between a first metallic bus and a second metallic bus. The first metallic strip is isolated from the metallic island by a first dielectric barrier. At least a parallel portion of the first metallic strip is generally parallel to the first metallic bus, the second metallic strip isolated from the second metallic bus by a second dielectric barrier. Each first semiconductor terminals that are coupled to the first metallic bus and to the metallic island. Each second semiconductor has terminals coupled to the metallic island and to the second metallic bus.