The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Aug. 21, 2018
Applicants:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

University of Virginia Patent Foundation, Charlottesville, VA (US);

Inventors:

Thomas Edwin Beechem, III, Albuquerque, NM (US);

Khalid Mikhiel Hattar, Albuquerque, NM (US);

Jon Ihlefeld, Charlottesville, VA (US);

Edward S. Piekos, Albuquerque, NM (US);

Douglas L. Medlin, San Ramon, CA (US);

Luke Yates, Altanta, GA (US);

Patrick E. Hopkins, Charlottesville, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/373 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 23/373 (2013.01); H01L 21/265 (2013.01); H01L 23/34 (2013.01);
Abstract

Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.


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