The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

May. 14, 2018
Applicant:

Ohio State Innovation Foundation, Columbus, OH (US);

Inventors:

Ronald M. Reano, Columbus, OH (US);

Michael Wood, Albuquerque, NM (US);

Ryan Patton, Columbus, OH (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/295 (2006.01); H01L 21/02 (2006.01); H01L 31/0232 (2014.01); G02B 6/12 (2006.01); G02F 1/025 (2006.01); G02B 6/122 (2006.01); G02B 6/42 (2006.01); G02F 1/01 (2006.01); G02F 1/313 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02238 (2013.01); G02B 6/12004 (2013.01); G02B 6/12009 (2013.01); G02B 6/1223 (2013.01); G02B 6/1225 (2013.01); G02B 6/42 (2013.01); G02F 1/0136 (2013.01); G02F 1/025 (2013.01); G02F 1/313 (2013.01); H01L 21/02252 (2013.01); H01L 31/0232 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12123 (2013.01); G02B 2006/12138 (2013.01); G02B 2006/12178 (2013.01);
Abstract

Amorphous silicon devices, systems, and related methods are described herein. An example method for fabricating a thin film with light-emitting or light-detecting capability can include depositing a thin film of amorphous silicon on a wafer such that crystalline defects are distributed throughout the thin film. Additionally, an example photonic device can include a p-doped region and an n-doped region formed on a wafer, and a resonator structure formed on the wafer. The resonator structure can be formed from amorphous silicon and can be arranged between the p-doped and n-doped regions to form a PIN junction. Optionally, the photonic device can be incorporated into a monolithic integrated optical system.


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