The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Nov. 22, 2017
Applicant:

Government of the United States, As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);

Inventors:

Nicholas Glavin, Beavercreek, OH (US);

Chris Muratore, Dayton, OH (US);

Timothy Fisher, West Lafayette, IN (US);

Andrey Voevodin, Denton, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B82B 1/00 (2006.01); B82B 3/00 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); B82B 1/002 (2013.01); B82B 1/008 (2013.01); B82B 3/0023 (2013.01); B82B 3/0038 (2013.01); H01L 21/02112 (2013.01); H01L 21/02266 (2013.01); H01L 29/2006 (2013.01); H01L 29/0665 (2013.01); H01L 29/1606 (2013.01);
Abstract

A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.


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