The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2019

Filed:

Jan. 26, 2016
Applicant:

Xi'an Uniic Semiconductors Co., Ltd., Shaanxi, CN;

Inventor:

Xiaowei Han, Shaanxi, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 7/06 (2006.01); G11C 7/14 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/062 (2013.01); G11C 7/14 (2013.01); G11C 11/1653 (2013.01); G11C 11/1673 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 7/067 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

An RRAM storage subarray structure, and reading and writing methods therefore. The RRAM subarray structure comprises a main array and a reference array. Any one column in the reference array comprises a first bit line, a second bit line and a source line, and comprises n/2 memory cells connected in parallel between the first bit line and the source line and n/2 memory cells connected in parallel between the second bit line and the source line, wherein k columns of memory cells in the reference array share the source line, and any one column in the reference array can be used as a reference cell. By providing an adaptive read reference current, the RRAM subarray structure increases the read margin and improves the read speed and success rate.


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